摘要
本文研究了ＳｉＨ４—Ｏ２体系ＬＰＣＶＤＳｉＯ２的工艺及设备。为了得到厚度均匀性好的薄膜，改进了反应气体的进气方式和装片舟的结构，获得了每炉１００片、直径为１００ｍｍ的硅片的膜厚不均匀性≤士５％的结果。
LPCVD SiO2 by using SiH4 O2 system was investigated. In order to obtain high uniformity of SiO2 film thickness, we improved the inlets of the reacting gases and the boat structure. An uniformity of film thickness is less than ± 5% in Ф100mm 100 wafers Per run.
出处
《微电子学与计算机》
CSCD
北大核心
1995年第5期1-4,共4页
Microelectronics & Computer
基金
浙江大学硅材料科学国家重点实验室资助
