摘要
本文详细介绍了一种高压快速ＢｉＣＭＯＳ模拟开关的电路设计原理及版图优化设计。在模拟开关的基准源和电平转换部分均采用ＢｉＣＭＯＳ设计技术，使得该模拟开关在较长沟道长度下也能实现５０ｎｓ以下的开关速度。同时通过对开关管版图的优化设计，使开关导通电阻小于５０Ω。
A fast high-voltage BiCMOS analog switch has been developed.The design principles and the layout optimization of the device are described in detail.BiCMOStechnology was adopted for the reference source and level translatoi n the analog switch,which allowed it to achieve a fast switching(below 50ns)even for longer channels. The layout of the switching transistor is designed sueh that the on-resistance(R_(on))for the circuit is less than 50Ω
出处
《微电子学》
CAS
CSCD
1995年第4期18-21,共4页
Microelectronics
