摘要
采用高分辨率光电导谱观察到高纯区熔硅单晶中剩余硼受主从基态到各共振激发态的p<sub>1/2</sub>系列跃迁谱线.考虑裂开P<sub>1/2</sub>价带的非抛物线性,精确得到了硼杂质从基态到P<sub>1/2</sub>价带的电离能E<sub>1</sub><sup>*</sup>（硼）=88.45±0.01meV,进而获得硅价带的自旋-轨道分裂为△<sub>o</sub>=42.62±0.01meV.
The authors present the high-resolution photoconductive observation of the transitions as-sociated with the resonant impurity states of residual boron in very high purity float-zone sil-icon single crystals at low temperatures. According to the transition energies to the P_(1/2) valenceband related impurity states,and taking the nonparabolicity into consideration, the ionizationenergy of boron acceptor to the spin-orbit split-off valence band is determined more accuratelyas 88.45±0.01 meV, the spin-orbit splitting of the valence bands in silicon is consequently de-duced to be 42.62±0.01 meV.
关键词
硅
光电导谱
价带自旋
轨道分裂
High-resolution photoconductive spectroscopy
High-purity silicon
Shallow
acceptors
Spin-orbit splitting
