摘要
以横向光伏效应为工作模式，采用氢化非晶硅（ａ－Ｓｉ：Ｈ）的快速退火固相晶化工艺，我们成功地研制了一维ＭＩＳ结构的多晶硅（ｐｏｌｙ－Ｓｉ）光位敏探测器（ＰＳＤｓ）．测试结果表明：该器件光响应峰位在６６０ｎｍ附近，峰位处光谱灵敏度为１×１０－３μＡ／μＷ，在２０ｍＷ／ｃｍ２光功率密度下，对７８０ｎｍ的近红外光其平均位敏度约０．２８ｍＶ／ｎｍ，与未经退火的α－Ｓｉ：Ｈ器件相比，光响应最大光位敏度为０．４６ｍＶ／ｎｍ，峰位红移６０ｎｍ，光谱灵敏度提高了１－２个数量级。
Rapid thermal annealing methods have been used to crystallize a-Si:H films deposited by PECVD.Poly-Si photo sensitive detectors worked in the model of lateral photoeffects have been produced by the MIS structure.It has shown that its frequency response has shifted from 600nm of a -Si:H PSDs to 660mn.Its maximum light sensitivity is about 1×10-2μA/μW.The average position sensitivity at 780nm in 20mW/cm2 light power density is about 0.28mv/mm.It's light sensitivity is 1-2 orders larger than that of a-Si.
出处
《四川师范大学学报（自然科学版）》
CAS
CSCD
1995年第6期91-95,共5页
Journal of Sichuan Normal University（Natural Science）
关键词
多晶硅
光位敏探测器
半导体
退火
rapid thermal annealing,poly-Si,photo position sensitive detectors
