摘要
测量和分析了1μm LDD MOSFET的穿通特性,与常规结构的MOSFET加以比较.结果表明,LDD结构能够有效地抑制DIBL效应、大幅度地提高短沟道MOSFET的源漏穿通电压.此外,还给出LDD MOSFET源漏穿通机制的定性解释.
The punchthrough currents of 1 μm channel length LDD Mosfet's in the 'off' conditionwere measured and compared to those of the conventional devices.The punchthrough currentpath of the LDD Mosfet's is identified to be the deep bulk path because of the existence of thelightly-doped region between the source/drain n^+ diffusions and the channel.Thus, the pun-chthrough voltage can be reatly increased by LDD structure.
关键词
MOSFET
源漏穿通
掺杂
LDD
LDD MOSFET
short-channel MOSFET
Punchthrough
DIBL effect
