摘要
通过伏-安特性及其温度关系和电致发光的测量,提出了碳化硅粉末的导电机理是:在高电场下是隧道效应,在低电场下是空问电荷限制电流效应。碳化硅防晕层的导电机理与碳化硅粉末的一致,但由于粉末间有粘结剂,受热后膨胀使接触势垒加宽,出现防晕层的电流和非线性特性随温度上升而下降的现象。所提机理为合理控制碳化硅防晕层的非线性特性提供了理沦依据。
The conduction mechanism of silicon carbide(SiC) has been proposed. Under high electric field, it is due to the tunnelling effect, and under low electric field it is mainly the space-charge-limited current. For the SiC coating containing adhesive, the increase of the width of barrier between SiC particles due to thermal expansion would lead to the current passing through SiC coating decreases with temperature increasing. The theory proposed will be helpful to controlling the non linear para meters of the SiC Corona-suppression coating.
出处
《电工技术学报》
EI
CSCD
北大核心
1989年第3期60-63,42,共5页
Transactions of China Electrotechnical Society
