摘要
本文采用氩离子刻蚀法，将ＳｉＯｘＮｙ膜减薄成不同厚度的样片，并制成Ａｌ－ＳｉＯｘＮｙ－Ｓｉ系统的ＭＩＳ电容器。利用平带电压随膜厚度变化的关系和最小二乘法，测定有效功函数差和Ｓｉ－ＳｉＯｘＮｙ系统的固定电荷密度。结果表明，该系统的平带电压值明显高于Ａｌ－ＳｉＯ２－Ｓｉ系统的值，原因是固定电荷密度增大、有效功函数差减小和相对介电常数增大的综合结果。有效功函数差的减小与Ｓｉ－ＳｉＯｘＮｙ界面态密度的增大有关。
In this paper,the Ar+ beam is applied to etch the SiO.N. films back todifferent thickness and hence form the MIS capacitor. The effective work functiondifference value at Al/SiOxNy/Si system and fixed charge density at Si-SiOxNy interface were measured by using the relationship between the flatband voltage and thethickness of SiOxNy films,as well as by using the least square method. The resultsindicate that the flatband voltage in Al/SiOxNy/Si system is obviously higher thanthe Al/SiO2/Si system, the reason is not only due to the increase of fixed chargedensity,but also the relation to the decrease of effective work function differencevalue,and the increase of relative dielectric constant. The decrease of effective workfunction difference in Al/SiOxNy/Si system,compared with the Al/SiO2Si system,isrelated to the increase of the density of interface state in Si-SiOxNy interface. Theresults also show the density of fixed charge and interface state in Al/SiOxNy/Sisystem decrease monotonically with increasing the temperature (from 1000 to1150℃)and time (from 15 to 120 min. ) of nitridation.
出处
《华南理工大学学报（自然科学版）》
EI
CAS
CSCD
1995年第2期53-58,共6页
Journal of South China University of Technology(Natural Science Edition)
