摘要
本文报道了采用含有ＩｎＳｂ非晶过渡层的两步ＭＢＥ生长技术，在ＧａＡｓ（１００）衬底上异质外延生长的ＩｎＳｂ外延层材料特性及初步的器件性能。５μｍ厚的ｎ型本征ＩｎＳｂ外延层７７Ｋ时的电子浓度和迁移率分别为：ｎ～２．４×１０￣（１５）ｃｍ￣（－３），μ～５．１２×１０￣４ｃｍ￣２Ｖ￣９－１）ｓ￣（－１），高质量ＩｎＳｂ外延层的Ｘ射线双晶衍射半峰宽（ＦＷＨＭ）＜１５０″。ＩｎＳｂ表面的相衬显微形貌，ＩｎＳｂ／ＧａＡｓ界面的ＴＥＭ形貌相和ＩｎＳｂ外延层的红外透射谱等测试结果都肯定了ＭＢＥＩｎＳｂ外延层的质量。研究结果已基本达到目前国外同类研究水平。用ＭＢＥ生长的ｎ型ＩｎＳｂ外延层薄膜首次制作了中波（３～５μｍ）多元光导线列器件，终测表明，器件的光导响应率较高Ｒ（Ｖ）～７８００Ｖ／Ｗ，均匀性很好ΔＲ（Ｖ）／Ｒ（Ｖ）＜７％，ＭＢＥＩｎＳｂ外延薄膜展示了良好的红外探测器应用前景。
The characteristic and preliminary performance of heteroepitial InSb layer with amorphous buffer grown on (100) GaAs substrates by two-step molecular beam epitaxy is presented. The electron concentration and electron mobility of n-type intrinsic InSb epilayer of 5μm thickness at temperature of 77K is n～2.4×10￣(15)cm￣(-3) and μ～5.12×10￣4cm￣2V￣(-1)s￣(-1), respectively. The best InSb epilayer of 5μm thick ness has X-ray rocking curve width less than 150″.Normaski microscope, transmission electron microscopy and infrared transmis-sion measurements all have confirmed the improved quality of the Insb epilayers. InSb MWIR photoconductor linear arrays are fabricated from InSb epilayer grown on GaAs with MBE for the first time. They have high response value R(V)～7800V/W, and good uniformity ΔR (V)/R(V) less than 7%, the preliminary performance of the lnSb film detector array promises infrared detector in appliea-tion.
关键词
分子束外延
锑化铟
外延层
红外探测器
Molecular beam epitaxy InSb epilayer Multielement photoconductive device
