摘要
采用电液相外延法在ｎ型ＧａＡｓ衬底上连续生长Ｇａ１－ｘＡｌｘＡｓ（ｘ＝０．７５）过渡层及ｐ型ＧａＡｓ发射层，测试结果表明，电液相外延法适合于制备透射式ＧａＡｓ光电阴极．
A new method of electrical current-induced liquid phase epitaxy(CLPE)is used to prepare transitional Ga1-xAlxAs(x=0.75)layers and emissive p-type GaAs layers.It is proved that CLPE is a suitable method for producing Negative Electron Affinity (NEA)photocathodes.
出处
《广西师范大学学报（自然科学版）》
CAS
1995年第2期32-36,共5页
Journal of Guangxi Normal University:Natural Science Edition
基金
国家自然科学基金
关键词
电液相外延
光电阴极
扩散长度
砷化镓
electrical current-induced liquid phase epitaxy(CLPE)
GaAs photocathode
diffusion length
negative electron affinity(NEA)
