摘要
从质子轰击条形半导体激光器线宽的实验测量，发现半导体激光器线宽与谐振腔结构有关。通过对Ｃ．Ｈ．Ｈｅｎｒｙ给出的半导体激光器线宽的理论公式进行分析，认为半导体激光器腔结构不同会引起激光器线宽的不同，并从理论上分析与推导了波导结构对激光器线宽的影响，定义了结构线宽△ｖｓ１／２概念及其表达式。修正了的线宽理论公式具有更广泛的适用范围。
From the experiment measurment of photo-bombed stripe geometry (DH) semiconductor laser's linewidth,it has found that the linewidth is related with the reasonant cavity structure.By analyzing of the C.H.Hemry's semiconductor laser linewidth theory formula,the paper get that the difference in the cavity strucrure of LD's will result in the different LD's liDewidth.We have analyzed and derived the influence of waveguide structure,the idea and formula of the structure linewidth of LD's.The corrected linewidth theory formula is show a more wide application meaning.
出处
《光通信技术》
CSCD
1995年第3期207-211,共5页
Optical Communication Technology
关键词
半导体激光器
线宽
波导结构
Semiconductor laser
Linewidth
Optical communication.
