摘要
Al栅可明显降低AM－LCD中a－SiTFT矩阵的栅总线电阻及栅脉冲信号延迟，有利于提高高密显示屏的开口率与图像质量。本文详细介绍了Al栅的阳极氧化技术，获得了适于a－SiTFT复合栅的Al2O3栅绝缘材料。
Al gate can obviously reduce total gate-line resistance and gate-pulse delay of a-Si TFT matrix used in AM-LCD. It is profitable for increasing the aperture ratio and image quality of high-information-content display screen. The anodized technology of Al gate is discussed in detail. A high quality gate insulator Al2O3 with good electric characteristics has been obtained,which is satisfied for the double-gate insulator a-Si TFT.
出处
《光电子技术》
CAS
1995年第2期116-121,共6页
Optoelectronic Technology
