摘要
锗硅超晶格和多孔硅的大量实验分析表明，其发光性能既不能用间接带隙来解释，也不同于直接光跃迁。本文通过波函数的谐波分析和表面化学键诱生的能带混合研究得出这两种材料中都可能产生出直接带隙分波，从而得到直接光跃迁。运用这种分波发光模型，解释了锗硅超晶格和多孔硅的大量实验结果。最后比较了这两种材料能带工程中的物理效应和化学效应，提出了综合此两效应优化设计新发光材料的新方法。
It is shown by a host of experiments that the luminescence in Ge/Si superlattices and porous silicon can not only be explained by the indirect gap transition but also is different from the direct gap transition. A direct gap subwave is induced from the quantum confinement in Ge/Si superlattices or the band mixing in porous silicon,which produces the direct gap transition. By using this subwave luminescence mdoel the experiments mentioned above have been explained in this paper. Finally the physical and chemical effects in these two materials are compared,and a combined design method for new superlattices is proposed.
出处
《固体电子学研究与进展》
CAS
CSCD
北大核心
1995年第3期228-238,共11页
Research & Progress of SSE
基金
国家自然科学基金
关键词
锗硅超晶格
多孔硅
分波发光
量子限制效应
Ge/Si Superlattices
Porous Silicon
Subwave Luminescence
Quantum Confinement
Banding Mixing
