摘要
用扫描隧道显微表征了多孔硅的表面结构．发现它的Ｈａｕｓｄｏｒｆｆ维数Ｄ的值为１．８８，与逾渗模型的值相等．
The surface structure of porous Si has been characterized by scanning tunneling microscopy. It is found that Hausdorff dimension of porous Si is D=1.88, which is in good agreement with that of invasion percolation model.
出处
《复旦学报（自然科学版）》
CAS
CSCD
北大核心
1995年第1期94-98,共5页
Journal of Fudan University：Natural Science
关键词
分形
逾渗
多孔硅
表面结构
硅
ractal, invasion percolation, porous Si
