摘要
本文采用石墨平台原子化、Ｚｅｅｍａｎ背景校正，研究砷化镓掺杂Ｉｎ的原子吸收特性。提出一种简便、灵敏直接测定砷化镓薄片中痕量Ｉｈ的方法。检测了砷化镓掺杂Ｉｎ量并考查其分布规律。
n this paper,the atomic absorptionCharacteristics of indium in GaAs was stud-ied by Zeeman GFAAS and L'vov platformtechnique,A simple and sensitive method isproposed for the determination of trace indi-um in GaAs,The method has been used forthe direct determination of doping indium inthin piece of GaAs and can provide the indi-um profile in GaAs.
出处
《分析试验室》
CAS
CSCD
北大核心
1995年第4期1-4,共4页
Chinese Journal of Analysis Laboratory
