摘要
本文分析了几种常规ＢｉＣＭＯＳ门电路的特性，对ＭＣＲｉＣＭＯＳ集成电路结构的二输入与非门和１１级环形振荡器进行了实验研究，并与常规ＢｉＣＭＯＳ进行了比较。实验结果说明：ＭＣＢＩＣＭＯＳ具有电路结构简单；芯片面积小；工作速度高，负载能力强和低压工作性能好等优点。
Some type of conventional BiCMOS logic gates are analyzed. For a merged Comple-mentary BiCMOS(MCBiCMOS)integrated circuits structure, some experimental research on fea-tures of MCBiCMOS two-input NAND gate and 11 steps ring oscillation circuits ls done and the re-sults are compared with conventional BiCMOS,The test indicates that the MCBiCMOS IC structure with this good performance simple circuit structure,small chip area,high operating speed,hard drive head and lower voltage operating.
出处
《电子器件》
CAS
1995年第3期162-167,共6页
Chinese Journal of Electron Devices
