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电场对二氧化锡纳米薄膜电性质和气敏性质的影响

The Effect of Electrical and Gas Sensing Properties on SnO_2 Film in Nanometer with Electrical Fild
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摘要 本文研究了用直流气体放电活化的反应蒸发制备的二氧化锡纳米薄膜的表面性质、电学性质以及气敏性质,重点研究正反向电场对其电学性质和气敏性质的影响,从理论上探讨了它的气敏机理. SnO2 Nano-Particle films were deposited by DC gas discharge activating reac-tive evaporation. The morphology, struture, composition and properties of SnO2 filmswere studied by SEM, XRD, AES. Using the apparatus made by ourselves, the rela-tionship between films resistance and time was studied when SnO2 nano-particle filmswere in electric field strength about 105 V/m. Futhermore, the electrical properties andthe gas sensitive characteristics for C2H5OH were investigated when SnO2 nano-particlefilms were in the electric field. The preciple of gas-sensitive of SnO2 nao particle filmshave been explained.
出处 《传感技术学报》 CAS CSCD 1995年第3期39-44,共6页 Chinese Journal of Sensors and Actuators
关键词 电场 二氧化锡 纳米材料 薄膜 电性质 气敏性质 gas-sensing materials nanometer thin films electric field
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  • 1何宇亮,刘湘娜.非晶硅薄膜晶化与结构特性的研究[J]电子学报,1982(04).

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