摘要
本文简单叙述了锑化铟(InSb)电荷注入(CID)探测列阵的基本原理和工艺条件,并给出了实验结果。介绍了一种新颖的、与常规不同的铬膜淀积工艺,使用了控制厚度的监控探针和改善薄膜厚度均匀性的双源。厚度可控制在60～100,这个技术可提供满足器件制作要求的金属膜,达到了预期的目的。
The basic principles of InSb CID detector array and technical con- dition are briefly described.Experiment results are given.The new deposition tech- nique of chromium—film that differs from coventional is presented.Monitor probe to control thickness and double source to improve homogeneity of thin-film thick are employed.This thickness can be controled in 600～100(?),this technique can be provided the metal-film meeting neeeds for the fabrication of device.An expectant purpose is achieved.
出处
《半导体光电》
CAS
CSCD
北大核心
1989年第4期38-41,共4页
Semiconductor Optoelectronics
