摘要
本文报导了一种光照面积为φ2.5mm 的 P 型硅光电二极管的制造和电学特性。在0.9μm 的峰值波长时,电流灵敏度为0.5μA/μW。器件最小可探测功率可达3.6×10^(-9)W。由于采用保护环结构,使得其暗电流较小,器件的稳定性和可靠性都相当好。
This paper reports inanufacture and electrical characteristic of P- type silicon photodiode with light-sensitivc area cf diameter 2.5mm.Sensilivity of cunent at the peak wa elength 0.9μm is 0.5 μA/μW.The noise equi alent power(NEP)of the photodiode is 3.6×10^(-10)W.Due to using guard ring structure,the device had smaller dark current,and its stability and reliability are quite desiralle.
出处
《半导体光电》
CAS
CSCD
北大核心
1989年第3期28-31,共4页
Semiconductor Optoelectronics
关键词
光电
二极管
硅
特性
Photodiode
Device Property
