摘要
研究了7.5cm372×276象素a－SiTFT有源矩阵的优化设计理论，讨论了材料物理参数和器件结构参数时器件性能的影响，并对其制作工艺进行了系统研究。
The optimum design of 7. 5 cm 372×276 pixel a^Si TFT active matrix is investigated in detail. The influence of the rnaterials characteristic and device geometry parameter on the performance of the device is discussed. Also the fabrication processes are studied systematically.
出处
《光电子技术》
CAS
1995年第1期41-47,共7页
Optoelectronic Technology
