摘要
给出了通过测量３条Ｘ射线双晶衍射摇摆曲线计算多层外延材料各层成份、界面共格度及晶向偏角的方法，并对（ＣｄＳｅ／ＺｎＳｅ）ＺｎＳｅ／ＧａＡｓ（００１）多量子阱材料的结构、应变及界面进行了研究．结果表明：ＺｎＳｅ缓冲层与衬底之间的界面共格度接近干零，而多量子阱部分与缓冲层之间的界面接近完全共格，表明多量子阱结构有较好的结构完整性．缓冲层与衬底之间有晶向偏角，而多量子阱结构与缓冲层之间无晶向偏角．在复杂多量子阱材料的摇摆曲线上未见内周期的卫星衍射峰．多量子阱实际的生长厚度比设计厚度小２０％～３０％，说明生长过程中存在表面原子的逃逸，致使样品的不同部位存在组份、厚度的不均匀和局部的应变。还讨论了Ｘ射线衍射仪与双晶衍射仪在测定多量子阱结构时的差别．
The method to determine the composition,the degree of interface coherency and the tilt angle between the layer and substrate by measuring three independent doublecrystal rocking curves is presented,and has been used in the study of(ZnSe/CdSe)/ZnSe/GaAs multiple quantum wells.The results show that the degree of interface coherency between the buffer layer(0.3μm)and the substrate is nearly zero,while that between the multiple quantum wells and buffer layer is nearly 1,indicating a good crystalline quality for the multiple quantum wells.The buffer layer was tilted with respect to the substrate,however,the multiple quantum wells were not tilted with respect to the buffer layer. The satellite peaks of the inner period of the complex multiple quantum wells were not observed except the zeroth-order peak.The calculated period thickness is 20￣30% less than the designed,indicating that the atoms escaped from the surface during growth,which can lead to the nonuniformity of composition and thickness as well as the presence of strain in the area.The differences between X--ray diffraction and X-ray double-crystal diffraction in measuring structures of multiple quantum wells are also discussed.
出处
《红外与毫米波学报》
SCIE
EI
CAS
CSCD
北大核心
1995年第3期167-174,共8页
Journal of Infrared and Millimeter Waves
关键词
X射线双晶衍射
多量子阱
硒化镉
X-ray double-crystal diffraction,rocking curve,multiple quantum wells,interface coherency.
