摘要
获得高分辨ＧａＰ：（Ｎ）光致发光光谱，观察到等电子陷阱束缚激子发光中ＬＯ（Γ）和ｌｏｃ多声子发射，其强度分布符合治松分布。将声子伴带区分为直接光跃迁和间接光跃迁，并进行了相应讨论．还观察到局域声子效应─—光谱相似定律和相当显著的背景光谱．
The high-resolution photoluminescence spectra of GaP:(N)were recorded. The multiphonon emission of LO(Γ)and localized phonons was observed in the luminescence of excitons bound to the isoelectronic traps. The intensities of replicas satisfied the Poissonfs distribution.The phonon sidebands were distinguished into indirect and direct optical transitions and discussed. The effects of localized phonon i.e.the spectral similarity law and the prominent background spectra were observed.
出处
《红外与毫米波学报》
SCIE
EI
CAS
CSCD
北大核心
1995年第4期277-282,共6页
Journal of Infrared and Millimeter Waves
基金
中国科学院红外物理国家重点实验室和福建省自然科学基金
关键词
发光光谱
激子发光
磷化镓
GaP:(N),luminescence spectra,excitonic luminescence.
