摘要
采用 XPS 技术研究了直流磁控溅射 ITO 膜的结构组成及其化学态。分析了成膜工艺——热处理、反应气体 O_2流量等对 ITO 膜表面及内部成分比例的影响。
The structure,composition and chemical states of ITO films prepared by D.C.reactive sputtering are analyzed by XPS.The influence of film preparing technique such as heat treatment,flow of reactive gas on the In:Sn:O ratio is discussed.
出处
《光电子技术》
CAS
1994年第2期142-147,共6页
Optoelectronic Technology
