期刊文献+

放电等离子烧结技术制备透明AlN陶瓷 被引量:7

TRANSPARENT AlN CERAMICS PREPARED BY SPARK PLASMA SINTERING
在线阅读 下载PDF
导出
摘要 采用放电等离子烧结(sparkplasmasintering,SPS)技术,以CaF2为烧结助剂,在1850℃烧结15min,成功制备了透明AlN陶瓷。随着CaF2含量的增加,样品的密实度和透过率都随之提高。在CaF2含量为2.5%(质量分数)的AlN陶瓷样品的透光率最高(56.3%)。继续提高CaF2含量,样品密实度和透过率反而有所下降。SPS制备的纯AlN陶瓷样品中出现了颜色不均匀现象。与传统烧结方法比较,SPS制备的样品具有很高的致密度、纯度和良好的晶体结构。CaF2的加入降低了烧结温度,烧结时间短,提高了AlN陶瓷的透过率,是制备透明AlN陶瓷的有效烧结助剂。 Transparent CaF2 doped AlN ceramics were prepared by spark plasma sintering (SPS) at 1850°C for 15 min. With the increase of the amount of CaF2, the density and transmittance of the samples increase. The sample doped with 2.5% in mass CaF2 has the best transmittance of 56.3%. When CaF2 content was increased to over 2.5%, the density and transmittance decrease with the increase of the addition of CaF2. Heterogeneity in the color was observed in the pure AlN ceramics prepared by SPS. Compared with traditional densification methods, the samples prepared by SPS have high density, high purity and fine microstructures. The addition of CaF2 can not only lower the sintering temperature but also can improve the transparency, which indicates that CaF2 is an effective additive for the preparation of transparent AlN ceramics.
机构地区 武汉理工大学
出处 《硅酸盐学报》 EI CAS CSCD 北大核心 2005年第6期753-757,共5页 Journal of The Chinese Ceramic Society
基金 "863"计划(2002AA332020)资助项目。
关键词 氮化铝透明陶瓷 放电等离子烧结 透过率 Ceramic materials Crystal microstructure Densification Transparency
  • 相关文献

参考文献15

  • 1SLACK G A. Nonmetallic crystals with high thermal conductivity[J]. Phys Chem Solids, 1973, 34(5): 321-335.
  • 2HARRIS D C. Durable 3-5 μm infrared window materials[J]. Infrared Phys Technol, 1998, 39(1): 185-201.
  • 3JONES D J, FRENCH R H, MULLEJABS H, et al. Optical properties of AlN determined by vacuum ultraviolet spectroscopy and spectroscopic ellipsometry data[J]. J Mater Res, 1999,14(1): 4 337-4 341.
  • 4KURAMOTO N, TANIGUCHI H, ASO I. Development of transparent aluminum nitride ceramics[J].Am Ceram Soc Bull, 1989, 68(4):883-886.
  • 5KURAMOTO N, TANIGUCHI H. Transparent AlN cera-mics[J]. J Mater Sci Lett, 1984(3): 471-474.
  • 6KURAMOTO N, TANIGUCHI H, ASO I. Translucent AlN ceramics substrate[J]. IEEE Trans Compon Hybrids Manuf Technol, 1987, 9(4): 386-390.
  • 7周艳平,王岱峰,奚益明,庄汉锐,温树林,郭景坤.透明氮化铝陶瓷的制备[J].科学通报,1999,44(15):1617-1619. 被引量:8
  • 8周艳平.[D].上海:上海硅酸盐研究所,1999.
  • 9MAMORU O. Sintering, consolidation, reaction and crystal growth by the spark plasma system(SPS)[J]. Mater Sci Eng, 2000, A 287: 183-188.
  • 10刘军芳,傅正义,王皓.放电等离子烧结氮化铝透明陶瓷的研究[J].硅酸盐学报,2003,31(3):320-323. 被引量:18

二级参考文献10

  • 1高濂,宫本大树.放电等离子烧结技术[J].无机材料学报,1997,12(2):129-133. 被引量:120
  • 2SELVADURAY G, SHEET L. Aluminium nitfide: review of synthesis methods [J]. Mater Sci Tech, 1993(9):463-473.
  • 3NOBUYUKI Kuramoto, HITOFUMI Taniguchi. Transparent AIN ceramics[J]. J Mater Sci Lett, 1984(3) :471-474.
  • 4NOBUYUKI Kuramoto, HITOFUMI Taniguchi, ISAO Aso. Development of transparent aluminum nitride ceramics[J ]. Am Ceram Soc Bull, 1989, 68(4) :883-887.
  • 5NOBUYUKI Kuramoto, HITOFUMI Taniguchi, ISAO Aso. Traslucent AIN ceramics substrate[J]. IEEE Trans Compon,Hybrids, Manuf Technol, 1987, 9(4) :386-390.
  • 6MAMORU Omori. Sintering, consolidation, reaction and crystal growth by the spark plasma system(SPS) [J]. Mater Sci Eng A, 2000(287) : 183-188.
  • 7周艳平 王岱峰 奚益明 等.透明氮化铝陶瓷的制备方法[P].CN 1199036A..1998-11—18.
  • 8周和平,刘耀诚,吴音.氮化铝陶瓷的研究与应用[J].硅酸盐学报,1998,26(4):517-522. 被引量:66
  • 9高濂,洪金生,宫本大树,DIAZDELATORRESebastian.放电等离子超快速烧结氧化铝力学性能和显微结构研究[J].无机材料学报,1998,13(6):904-908. 被引量:30
  • 10周艳平,王岱峰,奚益明,庄汉锐,温树林,郭景坤.透明氮化铝陶瓷的制备[J].科学通报,1999,44(15):1617-1619. 被引量:8

共引文献20

同被引文献102

引证文献7

二级引证文献37

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部