摘要
金刚石薄膜电阻率的高低是薄膜绝缘性能优劣的直观反映,也是影响辐射剂量计器件性能的重要因素。针对目前形核工艺与电阻率的关系还不十分清楚的问题。本文研究了微波等离子体形核阶段工艺参数如基片位置、微波功率、甲烷浓度的变化对金刚石薄膜的表面形貌和电阻率的影响。结果表明微波等离子体形核工艺参数对金刚石薄膜的电阻率和表面形貌有显著影响。获得的最佳成核工艺条件:基体温度960℃、甲烷浓度0.72%、压力5.3kPa、微波功率1300W。在此工艺条件下制得的金刚石薄膜的电阻率值达到1011Ω·cm数量级。
The higher resisitivity of the diamond films is an essential factor to its applications in electronics, radiation dosimeter and so on. It also has a direct effect on the performance of the radiation dosimeter. The effects of the processing parameters of the microwave plasma on the morphologies and resistivity of diamond thin films were studied, such as the substrate position, microwave power and methane concentration during nucleation period. The experiments showed that the nucleation parameters have great influence on the morphologies and resistivity of diamond thin films. In addition, the optimum conditions were found as follows: substrate temperature 960℃, methane concentration 0.72%, pressure 5.3kPa and microwave power 1300W. Under the above mentioned conditions the resistivity of the film could increase to the order of magnitude up to 10^(11) Ω·cm.
出处
《真空》
CAS
北大核心
2005年第3期11-14,共4页
Vacuum
基金
国家自然科学基金资助项目(10275046)。
关键词
金刚石薄膜
电阻率
表面形貌
形核工艺
辐射剂量计
diamond thin film
resistivity
morphology
nucleation parameter
radiation dosimeter
