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X光电子能谱分析中光电子峰和俄歇峰的干扰及消除 被引量:3

Interference of Auger Electron and Photoelectron Peaks in X-ray Photoelectron Spectroscopic Analysis
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摘要 X光电子能谱(XPS)在分析多元素材料时,光电子峰可能受到其它元素俄歇谱的干扰。在AlKα激发CrZnSi合金样品时,光电子峰Cr2p和俄歇峰ZnLMM相互干扰,而换用双阳极中的MgKα源激发,虽可消除此相互干扰,但样品表面的C1s和N1s又会受到ZnLMM干扰。类似地,AlKα激发的GaN样品中N1s受俄歇峰GaLMM的严重干扰,而换用MgKα源激发时,C1s峰又受到的GaLMM的干扰。交替使用Mg/Al双阳极激发源,可改变XPS分析中的俄歇谱及其背景对光电子峰的干扰位置,并用未受干扰的峰互相校正2组谱图能量位置,以对样品谱峰作出正确的分析。 In analyzingthe multi_element compounds with X_ray photoelectron spectroscopy(XPS),the photoˉelectron peaks would be interfered by the Auger electron spectra of other elements.It was found that the Cr2p peaks would be interfered by the ZnLMMAuger peaks when the CrZnSi alloy was excited by the AlK α source.This interference could be eliminated by using the MgK α source,but,instead,the C1s and N1s spectra of the alloy would be interfered by the ZnLMMpeaks.Similarly,the N1s peaks in GaNwould be interfered seriˉously by the GaLMMAuger peaks for the AlK α source,but not for the MgK α source.Thus,the interference sites of Auger peaks and their background on the photoelectron peaks could be changed by using alternatively the AlK α and MgK α in the twin anode X_ray source.All the peaks in the two sets of XPS spectra could be mutually calibrated by using the noninterference peaks.
作者 吴正龙
出处 《分析测试学报》 CAS CSCD 北大核心 2005年第3期45-47,共3页 Journal of Instrumental Analysis
基金 国家自然科学基金资助项目(10244007)
关键词 XPS 光电子峰 俄歇电子峰 CrZnSi合金 GAN 双阳极X射线源 XPS Photoelectron peak Auger electron peak CrZnSi alloy GaN Twin anode X-ray source
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  • 1黄惠忠.论表面分析及其在材料分析中的应用[M].北京:科学技术文献出版社,2002,1..
  • 2WAGNER C D, RIGGS W M, DAVIS L E, et al. Handbook of X-ray photoelectronspectroscopy [ M ]. Minnesota USA: Perkin -Elmer Corporation Physical Electronics Division, 1978. 72.
  • 3刘芬,邱丽美,赵良仲.XPS分析中使用样品磁透镜引起的谱峰位移和峰形畸变[J].分析测试学报,2002,21(5):65-67. 被引量:3

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