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宽带GaAs PHEMT VCO设计 被引量:1

Design of Broadband GaAs PHEMT VCOs
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摘要 分析了宽带VCO的设计原理,阐明了设计步骤,采用双变容二极管的新型结构设计了2~4GHz、4~7GHz、7~12GHz和12~18GHz四个宽带GaAsVCO芯片以完全覆盖2~18GHz频段。仿真结果表明本文设计的VCO具有频带宽、负载牵引小、结构简单的特点,有很好的应用价值。 The method and detailed steps of designing a broadband VCO are presented. A novel structure using two varactors is introduced to design four VCOs Chips which cover 2~4GHz,4~8GHz,8~12GHz and 12~18GHz frequency bands .The simulation results prove that these VCOs have the characteristics of broad frequency band,small load pulling and simple structure ,and they will have good practicability in the application.
出处 《电讯技术》 2005年第3期112-116,共5页 Telecommunication Engineering
关键词 宽带 压控振荡器 砷化镓赝晶高电子迁移率器件 设计 Broadband VCO GaAs PHEMT Design
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参考文献4

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同被引文献5

  • 1Kobayashi K W, Oki A K, Tran L T, et al. A 108-GHz InP-HBT monolithic push-push VCO with low phase noise and wide tuning bandwidth[J]. IEEE Journal, 1999,34(9) : 1225 - 1232.
  • 2Mostafa A H. A Sub-1-V 4-GHz CMOS VCO and a 12.5-GHz oscillator for low-voltage and high-frequency applications[J]. Circuits and Systems Ⅱ: Analog and Digital Signal Processing, IEEE Transactions 2001,48(10) :919 - 926.
  • 3Cluli-Ming Hung. Fully Integrated 5.35-GHz CMOS VCOs and prescalers[ J]. IEEE Trans Microwave Theory Tech, 2001,49(1 ) :17 - 22.
  • 4Huailin Liao, Jinglin Shi. "A design of low power muhi-GHz LC VCO"[ C ]//ASIC, 2003. Proceedings. 5th International Conference on Volume 2, Beijing: [ s.n. ], 2003.
  • 5Levantino S. Frequency dependence on bias current in 5-GHz CMOS VCOs: impact on tuning range and flicker noise upconversion [J]. IEEE J Solid-State Circuits, 2002,37(8):1003- 1011.

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