摘要
采用反应磁控溅射法在玻璃和石英衬底上沉积了ZnO薄膜 ,然后经过不同条件退火和在H2 S气氛中硫化最终得到ZnS薄膜 .用x射线粉末衍射仪、扫描电子显微镜和UV—VIS分光光度计对ZnS薄膜样品进行了分析 .结果表明 ,ZnO薄膜硫化后的晶体结构和光学性质取决于它的退火条件 .真空和纯O2 中退火的ZnO薄膜硫化后只是部分形成六角晶系结构的ZnS .而在空气和纯N2 中退火的ZnO薄膜则全部转变为ZnS ,在可见光范围内的光透过率可达约 80 % ,禁带宽度分别为 3 6 6和 3 6 1eV .ZnO薄膜的富氧、贫氧和近化学计量比状态是导致其硫化后性质差异的主要原因 .
ZnS films are prepared on glass and quartz substrates by suffidation of the ZnO films which are deposited via reactive magnetron sputtering and annealed under various conditions. The sulfurized films are characterized by using x-ray diffraction, scanning electron microscope and UV-VIS spectrometer. The results show that the crystalline structure and optical properties of the sutfurized films depend on the annealing conditions. ZnO films annealed in vacuum and pure O-2 atmosphere, respectively, are converted partially to the hexagonal ZnS, while the annealed ZnO films in air and pure N-2, respectively, are converted totally to ZnS. Also the ZnS films produced by sulfurizing the annealed ZnO films in air and pure N-2, respectively, have a high optical transmittance of about 80% at the wavelength of 400-800 nm, with the band-gap energies of 3.66 and 3.61 eV, respectively.
出处
《物理学报》
SCIE
EI
CAS
CSCD
北大核心
2005年第4期1874-1878,共5页
Acta Physica Sinica
基金
国家自然科学基金 (批准号 :10 2 75 0 76)资助的课题~~
