摘要
采用溶胶-凝胶工艺在Si(100)衬底上制备了Ba2TiSi2O8(BTS)薄膜。通过XRD衍射、傅立叶红外(FT-IR)、拉曼(Raman)散射光谱和原子力显微镜(AFM)对薄膜的显微结构进行了表征。AFM分析显示，BTS薄膜表面光滑，晶粒尺寸在0．30～0．50μm。薄膜结构分析表明：随着退火温度的增加，BTS薄膜的结晶度增加，薄膜结构变得更加致密。同时，随着退火温度的升高，晶胞尺寸出现了收缩，导致了BTS薄膜的四方比c／a从0．613上升到0．618，将对薄膜的压电性能产生影响。
Fresnoite (Ba_2TiSi_2O_8) thin films were grown on the polished Si(100) substrates by sol-gel method. The films were characterized using Fourier transforming infrared (FTIR), Raman scattering spectroscopy, X-ray diffraction (XRD) and atom force microscope (AFM). AFM observation shows that the film has a smooth surface and small grain size of 0.3-0.5μm. And the analysis on the phase structure shows that the crystallinity of BTS thin film increases and the structure become more compact as increasing post-annealing temperature. Besides, the increase of the annealing temperature causes an anisotropic shrinkage of the lattice axes and a change in the tetragonlity of c/a from 0.613 to 0.618, which will influence the piezoelectric properties of the BTS thin films.
出处
《人工晶体学报》
EI
CAS
CSCD
北大核心
2005年第2期283-287,共5页
Journal of Synthetic Crystals
基金
北京市教育委员会科技发展计划项目
国家自然科学基金(No. 10104004)资助项目
