摘要
报道了具有高增益自偏结构的低噪声S波段MMIC宽带低噪声高增益放大器.该放大器是采用国际先进的0.25μmPHEMT工艺技术加工而成.电路设计采用了两级级联负反馈结构,并采用电阻自偏压技术,单电源供电,使用方便,可靠性高,一致性好.MMIC芯片测试指标如下:在1.9～4.2GHz频率范围内,输入输出驻波小于2.0,线性功率增益达30dB,带内增益平坦度为±0.7dB,噪声系数小于2.7dB.芯片尺寸:1mm×2mm×0.1mm.这是国内报道的增益最高,芯片面积最小的S波段放大器.
This paper describes a self-bias S-band MMIC broad-band LNA(low noise amplifier) with high gain.The LNA is fabricated on advanced 0.25μm pHEMT process.It cascades two stages with voltage negative feedback structure,and is only supported by a single power supply with a self-bias resistance,thus is convenient to use with good reliability and coherence.The tested results are:the achieved noise figure(NF) is below 2.7dB from 1.9 to 4.2GHz,VSWin and VSWout is below 2,the power gain is 30dB,the fluctuation of gain is ±0.7dB.The chip dimension is 1mm×2mm×0.1mm.This is an S-band monolithic amplifier with the highest gain and the smallest chip area ever reported in domestic reperts.
基金
上海市AM基金资助项目(批准号:0204)~~
