摘要
讨论了一种新型FM1/NM/FM/I/FM2磁性隧道结,该隧道结结构可获得高质量的I层,从而具有重要的应用价值.利用Slonezewski的自由电子模型和转移矩阵方法,对这种隧道结中的隧穿电导(TC)和隧穿磁电阻(TMR)与NM、FM层的厚度以及和势垒高度的关系进行了研究.同时还通过和FM1/NM/I/FM2型隧道结的相应结果的比较讨论了FM层在FM1/NM/FM/I/FM2磁性隧道结中的作用.
In this paper, a new kind of magnetic tunneling junction FM1/NM/FM/I/FM is discussed theoretically. This structure ensures the high quality of the insulator layer, so it has important practical application. Based on the Slonezewski's free electron model and transferred matrix method, the relation between tunneling conductance(TC), tunneling magnetic resistance(TMR) and the thickness of NM, FM and the height of the barrier are discussed. In addition, the further discussions about the effects of the FM layer on the magnetic junctions FM1/NM/FM/I/FM2 are presented by comparing with the results of the magnetic junctions FM1/NM/I/FM2.
出处
《四川师范大学学报（自然科学版）》
CAS
CSCD
北大核心
2005年第2期198-201,共4页
Journal of Sichuan Normal University（Natural Science）
基金
教育部科学研究重点资助项目
关键词
磁性隧道结
隧穿电导
隧穿磁电阻
Magnetic tunnel junctions
Tunneling electric conductance
Tunneling magnetic resistance
