摘要
本文从γ瞬时辐照在半导体材料中引起的基本电离效应出发,分析了少子寿命、载流子迁移率、扩散系数与辐照剂量的关系;提出了晶体管的辐照模型;借助SPICE程序模拟了集成运放在γ辐照时的失效模式。
This paper analyzes from γ-transient radiation induced basic ionization effect in the semiconductor material that the minorcarrier life, carrier mobility and diffusion coefficiency are related to γ-radiation doses. A transistor radiation mode has been proposed. And a failure mode of the operational amplifier during the γ-transient radiation has been simulated with SPICE program.
出处
《微电子学与计算机》
CSCD
北大核心
1989年第1期44-46,共3页
Microelectronics & Computer
