摘要
例举了实现电路的输出电压温度漂移补偿和失调电压补偿的一些措施,介绍了作者在电路结构设计、工艺参数选择和版图设计等方面的一些考虑。实验结果表明,通过补偿设计,实际电路的温度漂移为≤0.2％℃,失调电压漂移为 100～200mV,符合使用要求。
Approaches to the implementation of compensations for temperature drift and offset voltage of a device are given in this paper. Also presented are considerations on the structural design of the circuit, selection of process parameters and the layout design. Experimental results show that a temperature drift equal to or less than 0.2%℃ and an offset voltage drift of 100～200 mV for an actual derice, which meet the requirements for applications, have been achieved through the compensation designing.
出处
《微电子学》
CAS
CSCD
1989年第2期1-6,共6页
Microelectronics
