摘要
采用电子束蒸发法制备的８１ＮｉＦｅ／Ｃｒ多层膜具有单向各向异性，磁滞回线非轴对称，相当存在１Ｏｅ数量级的交换偏场。磁电阻回线的上升和下降两枝差别明显，其中以横向磁电阻回线最为显著。有的试样上升枝与下降枝相应的最大横向磁电阻率之差已高达０．７８％，其最大各向异性磁电阻率（Ｒ＿（ｍａｘ）－Ｒ＿（ｍｉｎ））／Ｒ为４．７２％，甚高于Ｍｉｙａｚａｋｉ等￣［１］的优质８２ＮｉＦｅ合金单层膜的报道值３％。可以认为这类多层膜的磁电阻效应除主要来源于自旋－轨道耦合机制外，还有电子自旋相关散射机制的影响。
There are unidirectional anisotropy in 81 NiFe /cr multilayers prepared by。ele-etronic beam evaporated,The samples exhibit asymmetrical hysteresis 1oop.whichequivalent to the existence of an exchange bias of the order of 1 Oe.Two branchesof magnetoresistance loop measured with increasing and decreasing magnetic。fieldrespectively are different especially in transvers field condition,Th。maximum valueof transvers magnetoresistance of some samples reaches 0.78% and with maximumanisotropy magnetoresistance(R_(max)-R_(min))/R of 4.72%。That value is more largerthan the value 3%￣[1] of 82 NiFe alloy with high quality.we consider that the ma-gnetoresistance effect of these multilayer not only caused by spin-orbit coupling ma-chanism but also under the influence of spin dependent scattering。of。conduction ele-ctron machanism。
出处
《物理学报》
SCIE
EI
CAS
CSCD
北大核心
1994年第7期1185-1191,共7页
Acta Physica Sinica
基金
国家自然科学基金
