摘要
Ｂｉ（１２）ＴｉＯ（２０）（ＢＴＯ）晶体属于Ｓｉｌｌｅｎｉｔｅ结构，它与Ｂｉ（１２）ＳｉＯ（２０）（ＢＳＯ），Ｂｉ（１２）ＧｅＯ（２０）（ＢＧＯ）晶体在结构和性能上具有许多相似之处．由于Ｂｉ（１２）ＴｉＯ（２０）晶体是非一致共熔化合物，因此，在其晶体的生长过程中，必须使用过量的Ｂｉ２Ｏ３作自溶剂，本论文采用提拉法，在低拉速、较高转速的生长条件下，生长出了质量较好的纯Ｂｉ（１２）ＴｉＯ（２０）晶体和不同掺Ｃｅ量的Ｂｉ（１２）ＴｉＯ（２０）晶体，并详细地讨论了晶体中的宏观缺陷，特别是包裹体．Ｂｉ（１２）ＴｉＯ（２０）中的包裹体的形状和出现位置与晶体生长时的提拉速度、旋转速度、生长时固液界面的形状以及掺杂比例等因素有着密切的关系．
Bi(12)TiO(20) crystal belongs to sillenite series, which has many similarities to Bi(12)SiO(20) and Bi(12)GeO(20) crystals in structures and physical properties. Because of Bi(12)TiO(20) crystal melting incongruently, excessive Bi2O3 as a self-solvent must be used in its crystal growth. In this paper, czochralski crystal growth method has been applied with lower pulling rate and higher rotating rate. As a result we have got pure Bi(12)TiO(20) and various Ce-Bi(12)TiO(20) crystals, and we have also discussed the macroscopic defects in them, especially about their inclusions. The shapes and locations of these inclusions appearing in Bi(12)TiO(20) crystals are related to the pulling rate, the rotating rate, the shape of solid-liquid interface and the ratio of mixtures etc..
出处
《无机材料学报》
SCIE
EI
CAS
CSCD
北大核心
1994年第3期257-267,共11页
Journal of Inorganic Materials
基金
国家自然科学基金
