摘要
对自行研制的低温晶体管于液氮温度下进行了低频噪声测量，结果表明：与室温相比１／ｆ噪声显著增大．根据１／ｆ噪声理论，并参照器件室温和低温下ＩＢ～ＶＢＥ曲线的不同，认为在低温下ＥＢ结正向压降增大和载流子的冻折效应是使该器件１／ｆ噪声等效输入电流功率谱密度变大的主要原因．
The result of the measurement of low-frequency noise indicates that the 1 / fnoise of low-temperature transistors at liquid nitrogen temperature increases greatly compared with that at the room temperature. According to the theory of 1/ f noise and the variation of IB-VBe curve of this device at both room temperature and low temperature, this paper indicates that the enlargement of the 1 / f noise equivalent input current power spectrum density at low temperture comes from the increase of E-B junction forward voltage drop at low temperature and freezeout effect.
出处
《天津大学学报》
EI
CAS
CSCD
1994年第4期507-511,共5页
Journal of Tianjin University(Science and Technology)
