摘要
在本工作中，首次用近红外光致发光法观察到在ＧａＡｓ衬底上用金属有机化学相沉积方法（ＭＯＣＶＤ）生长的Ｇａ＿（０．５）Ｉｎ＿（０．５）Ｐ外延薄膜所发射的１．１７、０．９９及０．８５ｅＶ的个新发光峰。其中只有１．１７ｅＶ发射与Ｇａ＿（０．５）Ｉｎ＿（０．５）Ｐ外延薄膜的部分有序结构有关。实验获得的１．１７ｅＶ发射的变温与变激发强度特性可用受主－施主对复合来很好地给予解释。该受主－施主对系由镓空位作为受主及与其最邻近的镓子格子上的碳作为施主所组成。在考察Ｇａ＿（０．５）Ｉｎ＿（０．５）Ｐ外延薄膜的部分有序结构与其受主－施主对复合能间关系的基础上，导出了受主－施主对跃迁的新的能量方程。
The 1.17,0.09 and 0.85─eV photoluminescence emissions in Ga_(0.5)In_(0.5)Pepilayers grown on GaAs substrates by metal─organic chemical vapor deposition are ob-served.Only the 1.17─eV emission depends on the ordered structure of Ga_(0.5)In_(0.5)Pepilayers.The characteristics of the 1.17─eV emission with respect to changes of tempera-ture and excitation intensity are explained well by the recombination of the donor- acceptorpair(DAP),composed Of the carbon donor on gallium sublattice site and the gallium va-cancy acceptor as the nearest neighbor.The relationship between the ordered structure andthe recombination energy of DAP is examined and a new energy equation for DAP transi-tion is deuced.
出处
《河北大学学报（自然科学版）》
CAS
1994年第2期1-7,共7页
Journal of Hebei University(Natural Science Edition)
关键词
薄膜
光致发光
GAINP
MOCVD
Near Infrared photoluminescence of(Ga_(0.5)In_(0.5)P)Epilayer Transitionfrom Partially Ordered to Disordered phase Recombination of Donor-acceptor Pair(RDAP)Energy Equation for RDAP.
