摘要
用时间分辨反射率技术实时测量了Ｓｉ＋、Ａｓ＋注入单晶硅的固相外延生长速率和外延层厚度，并与背散射沟道方法测得的非晶层厚度进行了比较。介绍了测量原理，分析了实验结果．
he time-resolved reflectivity(TRR) technique has been used to measure the solid phase epitaxial growth rate and the thickness of epitaxial layer for Si+ and As+implanted single crystalline wafers.The thickness of amorphous layer for the As-implanted samples has been determined by backscattering-channeling analysis to confirm the measured TRR results.The principle of the TRR technique is introduced and the experimental result is discussed.
出处
《核技术》
CAS
CSCD
北大核心
1994年第8期471-475,共5页
Nuclear Techniques
基金
国家自然科学基金
关键词
离子注入
固相外延
反射率
硅
Crystal silicon,Ion implantation,Solid phase epitaxy,Reflectivity
