摘要
对ＨＣＩ、ＨＦ和ＨＮＯ；三种ＭＯＳ级高纯试剂中１８种金属杂质用发射光谱进行分析研究，取２０ｍｌ样品，加人适量甘露醇络合硼杂质，在有机玻璃防尘罩内低温挥发基体富集杂质，最后将杂质溶液转移到一对平头电极上，用电弧光谱进行测定。检测限为０．２～４．０（ｎｇ／ｍｌ），加入标准的回收率绝大部分在９０％以上。
kinds of metal impurities in MOS grade HCI, HF and HNO3 were analyzed byemission spectroscopy. A proper volume of C6H14O4 was added to 20 ml sample to form boronimpurity complex, and the substrate volatilization and impurity concentration were carriedout in an organic glass hood at low temperature. 20μg of NaF was added as spectroscopiccarrier and the solution was transfered to 2 flat headed graphic electrodes to perform arcspectroscopy analysis. The detection limit is 0. 2-4 ng/ml and the recovery rate of addedstandard is greater than 90% for most elements.
出处
《光谱学与光谱分析》
SCIE
EI
CAS
CSCD
北大核心
1994年第3期71-78,共8页
Spectroscopy and Spectral Analysis
关键词
集成电路
高纯试剂
金属杂质
Large scale integrated circuit, High purity chemical reagent, Emissionspectroscopy
