摘要
在制备高质量的（Ｂａ，Ｐｂ）ＴｉＯ＿３基高居里温度ＰＴＣＲ陶瓷时，一般采用铅气氛烧结方法。但是，这种烧结工艺制成的产品的相对成本是高的。作者的实验表明，高容量ＳｉＯ＿２掺杂烧结方法也可以用于制备高质量的（Ｂａ，Ｐｂ）ＴｉＯ＿３基高居里温度ＰＴＣＲ陶瓷。本文主要报道高容量ＳｉＯ＿２对（Ｂａ，Ｐｂ）ＴｉＯ＿３基高居里温度ＰＴＣＲ陶瓷烧结工艺和电特性的影响。
A lead atmosphere sintering method isused generally in preparing(Ba,Pb)TiO_3 based highcurie temperature PTCR ceramics with high-quality.However,the relative cost of productsprepared by this method is high.Author’sexperiments showed that the high content SiO_2 dopedsintering method could be applied to prepare(Ba,Pb)TiO_3 based high curie temperature PTCR ceramicswith high-quality.This paper mainly reported theeffects of high content SiO_2 on the sintering processand the electrical characteristics of(Ba,Pb)TiO_3based high curie temperature PTCR ceramics.
出处
《功能材料》
EI
CAS
CSCD
1994年第6期542-544,共3页
Journal of Functional Materials
关键词
SiO2
掺杂
BATIO3
PBTIO3
居里温度
PTCR陶瓷
Ba,Pb)TiO_3 based high curie temperature PTCR ceramics,high content SiO_2 dopedsintering method,electrical characteristics
