摘要
在７７－３００Ｋ温度下研究了Ｚｎ（１－ｘ）ＣｄｘＳｅ－ＺｎＳｅ多量子阱（ＭＱＷｓ）的光致发光特性．首次在７７Ｋ，Ａｒ离子激光器的４５７．９ｎｍ激发下，在Ｚｎ（０．６８）Ｃｄ（０．３２）Ｓｅ－ＺｎｓｅＭＱＷｓ中观测到５个发光带，其中三个发光带被归因于不同的激子发射：即ｎ＝１重空穴（ＨＨ）激子；ｎ＝ｌ轻－重空穴（ＬＨ）激子和ｎ＝ＩＨＨ激子同时发射两个纵光学声子的复合发光，并且，；ｎ＝１ＨＨ激子发光可延续至室温．
Zn1-xCdxSe-ZnSe multiple quantum wells (MQWs ) were grown on GaAs (100) substrate by MOCVD. Their photoluminescence (PL) was studied at temperature between 77K-300K. We have observed five emission bands in Zn0.68Cd0.32Se-ZnSe MQWs under the 457. 9um line of an Ar ion laser excitation at 77K for the first time. The three of these bands are attributed to different exciton emission, the n=1 heavy-hole (HH) exciton transition, the n=1 light-heavy hole (LH) exciton transiton and n=1 HH exciton transition with the emission of two LO phonons, respectively.
出处
《发光学报》
EI
CAS
CSCD
北大核心
1994年第2期89-93,共5页
Chinese Journal of Luminescence
基金
国家"863"计划光电子主题
国家"攀登计划"
中国科学院长春物理所激发态物理开放实验室资助
