摘要
根据三角形势场近似，给出了ＭＯＳ反型层波函数的解析表达式，计算了量子化效应作用下反型层电子的空间分布，并与经典理论进行了比较。
Based on the approximation of triangular potential field,the analytical formula for thewave function in a MOS inversion layer is presented,and the electron distribution by the quantum ef-fect is calculated. The results are compared with those by the classical theory.
出处
《东南大学学报（自然科学版）》
EI
CAS
CSCD
1994年第5期38-41,共4页
Journal of Southeast University：Natural Science Edition
关键词
MOS
反型层
量子效应
metal- oxide-semiconductor structure
inversion layer
quantum effect
