摘要
目前直接电光取样技术是在片检测砷化镓高速集成电路内部动态特性的最好方法。我们建立了半导体激光器电光取样系统，测试了梳状信号发生器输出的４３．７ｐｓ的电脉冲信号以及频率５ＧＨｚ的微波信号，并测试了频率３ＧＨｚ的微波信号的位相移动或时间延迟以及铁氧体微波移相器的静态特性曲线，这个系统将被应用于砷化镓高速集成电路内部动态特性在片检测。
Direct electro-optic sampling is a very powerful technique for characterizing high speed GaAs integrated circuits on wafer,An electro-optic sampling system using semiconductor lasers has been set up. It has been used to test 43.7 ps fuli width at half maximum electric pulses generated by a comb generator,SGHz microwave signaIs, phase shift or time delay of 3GHz microwave signals and static curve of microwave ferrite phase shifter. This system will be applied to the on-wafer tests of dynamic characters of high speed GaAs integrated circuits.
出处
《电子学报》
EI
CAS
CSCD
北大核心
1994年第11期75-77,共3页
Acta Electronica Sinica
关键词
电光取样
高速集成电路
检测
半导体激光器
Electro-optic sampling,High speed integrated circuit,On-wafer test, Semiconductor laser,Microwave
