摘要
用磁控溅射法制备了Ｔ０ａ２Ｏ５薄膜，再用Ｃ－Ｖ法和ＪＦＥＴ外接薄膜电极法研究其稳定性和离子响应灵敏度．实验发现，在纯氧中沉积的厚２００ｎｍＴ２Ｏ５薄膜有较高的离子响应灵敏度和良好的稳定性．
The H+ sensitive behavior of Ta2O5 has ben reported on the letter. The magnetron-sputtering method was chosen for the Ta2O5 membranedeposition. C-V measurments of MIS structures were uesd for evaluatingthe stability of the membranes. It is shown that the effective interface charge density is 3 ×1012 / cm2 and the motive charge density is 6.91×1010 / cm2. The pH response of the membranes was measured by connecting the sousing membranes with a JFET. The typical sensitivityis 46 (pH<7) and 25 (pH>7) respectly. High sensitivity can be achivedby reducing the thickness of the membranes and oxygen Partial Pressure when sputtering. The Ta2O5 provid higher sensitivity and better stability than that other.
出处
《材料研究学报》
EI
CAS
CSCD
1994年第5期449-451,共3页
Chinese Journal of Materials Research
关键词
Ta2O5薄膜
离子敏感
稳定性
Ta_2O_5 membrane, ion sensitive, membrane electrode, stability
