摘要
本文从理论上得出半导体激光器中晶格和空穴温度保持室温不变，但电子因受微波场加热而变温时，光增益的变化，并与晶格、空穴和电子温度一起变化时的结果作比较．据此分析了电子温度单独变化对半导体激光器静态行为的影响，指出新提出的微波场加热电子变温调制过程的物理机制与通常电流调制过程的根本区别．
Abstract Variation of optical gain in semiconductor laser with electron temperature varied by microwave field heating while temperatures of the holes and lattice are kept constant at room temperature has been treated theoretically. and compared with the result of the electron, hole and lattice temperatures varying simultaneously.By which, the effect of electron heating temperature on the static behavior of semiconductor laser has been analyzed and the fundamental difference between electron heating modulation and the ordinary current modulation has been distinguished physically.
基金
国家自然科学基金
