摘要
本文在有效质量理论基础上计算了ＧａＡｓ／Ａｌ０．４Ｇａ０．６Ａｓ多量子阱子带间光吸收谱以及电子态密度。具体讨论了两种情况的吸收．第一种情况是量子阱中只存在一个基态；第二种情况是量子阱中存在一个基态同时还存在一个激发态．最后与有关实验进行比较．
Abstract The intersubband(in the conduction band) optical absorption coefficients and the densities of states in GaAs/Al0.4Ga0.6As multiquantum wells are calculated by using the effective mass theory for two cases. The first case is that there is one ground state in quantum well; the second case is that there are one ground state and one excited state in quantum well. The calculated curves are compared with the experimental results.
