摘要
本文应用二次离子质谱（ＳＩＭＳ），微分霍尔效应和透射电镜（ＴＥＭ）研究了硅中高温注入砷离子的扩散和激活行为．将１８０ＫｅＶ，１×１０１５ｃｍ－２砷离子在５００℃至１０００℃的温度范围内注入硅．研究结果表明：在５００℃至８５０℃注入时所发生的异常扩散和载流子浓度及迁移率深度分布与剩余缺陷的分布密切相关；而且随着注入温度的增高，砷的增强扩散亦增强，同时所形成的剩余缺陷减少．在注入温度高于８５０℃时，随着注入温度的增高，砷的增强扩散效应减弱．在５００℃至１０００℃的注入温度，与热扩散相比，砷的增强扩散效应显著；电激活率随着注入温度的增高而增大．
Abstract The diffusion behavior and electrical activation of arsenic implanted at high temperatures in silicon are studied.For this purpose, arsenic ions have been implanted into (100) oriented silicon at 180keV to a dose of 1×1015cm-2 at temperatures in the range of 500℃ to 1000℃.It is shown that there is significant diffusion taking place during implantation.The diffusion enhancement is considerable, compared to thermal diffusion.For implantation temperatures from 500℃ to 800℃, the anomalous diffusion markedly correlates with the depth distribution of the residual defects;the enhancement of arsenic diffusion increases with temperature,accompanying the decreased formation of the residual defects.However,for implantation temperature above 850℃,the diffusion enhancement reduces with increasing temperature.Changes in carrier concentration and mobility also correlate with residual defects.The electrical activity increases with the implantation temperature in the range from 500℃ to 1000℃.
