摘要
利用离子注入法，以７×１０１４／ｃｍ２和１×１０１５／ｃｍ２的剂量对ＩｎＰ进行稀土元素Ｅｒ的掺杂，采用了两种未加淀积膜覆盖的退火方式，在１０Ｋ下均观测到ＩｎＰ中Ｅｒ３＋１．５４μｍ特征光致发光峰．光致发光（ＰＬ）和反射式高能电子衍射给出发光强度和晶格恢复程度与退火条件的依赖关系，结果表明Ｅｒ３＋在ＩｎＰ中的光激活性在很大程度上取决于ＩｎＰ晶格的恢复．
Abstract A Characteristic 1.54μm emission of rare-earth Er(3+) in the erbium implanted InP has been observed through 10K photoluminescence.The InP samples wereimplanted by Er with dosages of 7×10(14)/cm2 and 1×10(15)/cm2.They were thenannealed by two different kinds of thermal treatments without any passivation doposited-film on the surfaces. The effects of thermal annealing on Er(+3) emission intensity were investigated by photoluminescence(PL) at a temperature of 10K andreflective high-energy electron diffraction(RHEED). The results show that the optical activity of Er(3+)in the implanted InP is to a great degree dependent on the recovery of the implanted damage in InP.
基金
国家教委博士点基金
集成光电子学联合实验室资助
北京市中关村地区测试中心的资助
关键词
磷化铟
稀土元素
离子注入
发光
Annealing
Electron diffraction
Erbium
Ion implantation
Photoluminescence
