摘要
用光调制反射谱和透射电镜技术研究分子束外延生长的应变超晶格In_(0.15)Ga_(0.85)As/GaAs,并讨论了实验结果。
Strained In0.15Ga0.85As/GaAs superlattices on GaAs(001) substrate grown by MBE have been studied by using photoreflectance(PR)and transmission electron microscopy (TEM). Their results are discussed.
出处
《固体电子学研究与进展》
CAS
CSCD
北大核心
1993年第3期197-200,共4页
Research & Progress of SSE
