摘要
用分析方法获取具有4个端口的双栅FET适用S参数进行设计,用微波单片集成电路技术制成增益30dB,可控增益大于65dB,二栅开关时间小于5ns的S波段单片可变增益放大器,封装后的尺寸为17.5mm×20mm×5mm。
This paper describes an analyzed method to obtain the four-port 5-parameters of a dual gate MESFET. By using them,the amplifiers are designed. The fabricated amplifier has over 30 dB gain,larger than 65 dB variable gain and less than 5 ns switching time of the second gate. Its packaged size is only 17.5mm×20mm×5mm.
出处
《固体电子学研究与进展》
CAS
CSCD
北大核心
1993年第2期97-99,共3页
Research & Progress of SSE
