摘要
研究了150 keV Kr^+离子注入对聚酰亚胺(PI)导电性能的影响。发现 PI 样品注入 Kr^+离子后的室温电阻率比注入 Kr^+前降低约16个数量级。用范德堡法测量了193K至293K 温度范围内的电传导行为,对损伤层内的电传导机理进行了讨论。以150keV Kr^+轰击 Al/PI 双层薄膜系统。用背散射分析及误差函数拟合法对实验结果进行拟合计算,得到了 Al 在 PI 中的深度混合扩展量。
The influence of the implantation with 150 keY Kr^+ on the electrical conductivity for Poly-imide has been studied.It has been found that the resistivity at roon temperature declined by 16 or-ders of magnitude due to the Kr^+ implantation process.The conductive performance has been fur-ther studied in the temperature range from 193 K to 293 K by the Van der Pauw's method and themechanism of eonduetive process in the damaged layer has been discussed.The system of Al/PI bi-layered film was also bombarded with 150 keV Kr^+ ions.From the Rutherford backscattering spec-tra(RBS)and error function fitting method,the mixing depth of Al in Polimide has beenobtained.
关键词
离子束
混合
电阻率
聚酰亚胺
薄膜铝
ion beam mixing
enor function fitting method
electrical resistivity
damaged layer
